The large differences in domestic and international LED chip technology

In other countries, leading companies such as Osram, the United States Puri, and SANKEN have taken a breakthrough in large-size silicon substrate GaN-based LED research, and Philips, Samsung, LG, Toshiba, and other international giants also set off a wave of LED on a silicon substrate GaN-based LED research boom. Among them, in 2011, the United States Puri on the 8-inch silicon substrate developed a high-efficiency GaN-based LED, making luminous efficiency and device performance LED on the top level of sapphire and silicon carbide substrates comparable to 160lm / W; in 2012, Osram successfully produced 6 inches silicon substrate GaN-based LED.

On the other hand, in mainland China, the breakthrough technology of LED chip companies mainly depends on increasing capacity and large-size sapphire crystal growth technology. Except for LatticePower in 2011 successfully achieved mass production of 2 inches silicon substrate GaN-based high-power LED chips, the Chinese chip companies on a silicon substrate GaN-based LED research no major breakthrough. The current Chinese mainland LED chip companies still focus on the main production, sapphire substrate material, and wafer growth techniques. The mainland chip giant, such as Three safety optoelectronics, BDO Runda, and Tsinghua Tongfang Company other also made a breakthrough in capacity. led explosion proof lighting 

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